Publications
For detailed information about publications please contact:
Henk Vrielinck (Lecturer, head of researchgroup)
2011
“Electron nuclear double resonance study of photostimulated luminescence active centers in CsBr:Eu2+ medical imaging plates”
H. Vrielinck, F. Loncke, J.-P. Tahon, P. Leblans, P. Matthys and F. Callens
Phys. Rev. B 83, article no. 054102
“Assessment of periodic and cluster-in-vacuo models for first principles calculation of EPR parameters of defects in crystals : Rh2+ defects in NaCl as case study”
N. Sakhabutdinova, A. Van Yperen-De Deyne, E. Pauwels, V. Van Speybroeck, H. Vrielinck, F. Callens and M. Waroquier
J. Phys. Chem. A 115, p. 1721-1733
“Germanium doping for improved silicon substrates and devices”
J. Vanhellemont, J. Chen, J. Lauwaert, H. Vrielinck, W. Xu, D. Yang, J.M. Rafí , H. Ohyama, E. Simoen
J. Crystal Growth 317, p. 8-15
“Signature of a back contact barrier in DLTS spectra”
J. Lauwaert, S. Khelifi, K. Decock, M. Burgelman and H. Vrielinck
J. Appl. Phys. 109, article no. 063721
“Electron paramagnetic resonance study of rare-earth related centres n K2YF5:Tb3+ thermoluminescence phosphors”
D. G. Zverev, H. Vrielinck, E. Goovaerts and F. Callens
Opt. Mater. 33, p. 865-871
“A photosensitive Cr3+ center in photorefractive Bi12SiO20 crystals co-doped with chromium and phosphorus”
I. Ahmad, V. Marinova, H. Vrielinck, F. Callens and E. Goovaerts
J. Appl. Phys. 109, article no. 083506
“Optical and structural properties of aluminium oxide thin films prepared by a non-aqueous sol-gel technique”
N. Avci, P. F. Smet, J. Lauwaert, H. Vrielinck and D. Poelman
J. Sol-Gel Sci. Technol. 59, p. 327-333
“On the impact of heavy doping on grown-in defects in Czochralski-grown silicon”
X. Zhang, W. Xu, X. Ma, D. Yang, L. Gong, D. Tian and J. Vanhellemont
ECS Transactions 34, p. 1151-1157
“On the impact of stress on intrinsic defect formation during single crystal silicon growth”
J. Vanhellemont
Phys. B, Accepted for publication
“Analysis of Auger Recombination Characteristics in High Resistivity Si and Ge”
A. Uleckas, E. Gaubas, T.Ceponis, K. Zilinskas, R. Grigonis, V.Sirutkaitis and J. Vanhellemont
Solid State Phenomena Vols. 178-179, p. 427-432
“Carrier Lifetime Studies in Diode Structures on Si Substrates with and without Ge Doping”
A. Uleckas, E. Gaubas, J.M. Rafi, J. Chen, D. Yang, H. Ohyama, E. Simoen and J. Vanhellemont
Solid State Phenomena Vols. 178-179, p 347-352
“Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes”
E. Gaubas, A. Uleckas, J.M. Rafi, J. Chen, D. Yang and J. Vanhellemont
Phys. B, Accepted for publication
"Improved calculation of vacancy properties in Ge using the HSE06 range-separated hybrid functional"
P. Spiewak, J. Vanhellemont and K. J. Kurzydlowski, J. Appl. Phys. Accepted for publication
“Intrinsic point defect incorporation in silicon single crystals grown from a melt, revisited”
J. Vanhellemont
J. Appl. Phys., Accepted for publication
2010
"On the assumed impact of germanium doping on void formation in Czochralski-grown silicon"
Vanhellemont J , Zhang XP , Xu WB , Chen JH , Ma XY , and Yang DR
J. Appl. Phys. 108, article no. 123501
"Characterization of graded CIGS solar cells"
Decock K, Lauwaert J, and Burgelman M
Proceedings of Inorganic and Nanostructured Photovoltaics Vol. 2, p. 49-54
"Characterization of flexible thin film CIGSe solar cells grown on different metallic foil substrates"
Khelifi S, Belghachi A,Lauwaert J, Decock K, Wienke J , Caballero R , Kaufmann CA, and Burgelman M
Proceedings of Inorganic and Nanostructured Photovoltaics Vol. 2, p. 109-117
“On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon”
J. Vanhellemont, M. Suezawa and I. Yonenaga
J. Appl. Phys. 108, article no. 016105
“A simple correction method for series resistance and inductance on solar cell admittance spectroscopy”
J. Lauwaert, K. Decock, S. Khelifi S and M. Burgelman
Sol. Energ. Mat. Sol. C. 94 (6) p. 966-970
“Majority carrier capture rates for transition metal impurities in germanium”
J. Lauwaert and P. Clauws
Thin Solid Films 518 (9) p. 2330-2333
2009
“Experimental and theoretical study of the thermal solubility of the vacancy in germanium”
J. Vanhellemont, J. Lauwaert, A. Witecka, P. Spiewak, I. Romandic and P. Clauws
Phys. B 404 (23-24) p. 4529-4532, 2009
“Strange lifetimes of the vibrations of interstitial oxygen in SiGe alloys”
K. K. Kohli, N. Q. Vinh, P. Clauws and G. Davies
Phys. B 404 (23-24) p. 4689-4692, 2009
“Comparison of electron irradiation effects on diodes fabricated on silicon and on germanium doped silicon substrates”
H. Ohyama, J. M. Rafí, F. Campabadal, K. Takakura, E. Simoen, J. Chen and J. Vanhellemont
Phys. B 404(23-24) p. 4671-4673, 2009
“Impact of silicon substrate germanium doping on diode characteristics and on thermal donor formation”
J. M. Rafí, J. Vanhellemont, E. Simoen, J. Chen, M. Zabala and F. Campabadal
Phys. B 404 (23-24) p. 4723-4726, 2009
“Evaluation of the crystalline quality of beta-Ga2O3 films by optical absorption measurements”
K. Takakura, D. Koga, H. Ohyama, J. M. Rafí, Y. Kayamoto, M. Shibuya, H. Yamamoto and J. Vanhellemont
Phys. B 404 (23-24) p. 4854-4857, 2009
“On the diffusion and activation of ion-implanted n-type dopants in germanium”
E. Simoen and J. Vanhellemont
J. Appl. Phys. 106 (10) art. no. 103516, 2009
“Pulsed photo-conductivity and carrier recombination lifetime spectroscopy of metal doped germanium”
E. Gaubas, A. Uleckas and J. Vanhellemont
Superlattice. Microstr. 45 (4-5) p. 256-266, 2009
“Decay mechanism of the Nv -1 vibration of oxygen in crystalline germanium”
G. Davies, K. K. Kohli, P. Clauws P and N. Q. Vinh
Phys. Rev. B 80 (11) art. no. 113202, 2009
“Electronic properties of titanium and chromium impurity centers in germanium”
J. Lauwaert, J. Van Gheluwe, J. Vanhellemont, E. Simoen and P. Clauws
J. Appl. Phys. 105 (7) art. No. 073707, 2009
“What Do We Know about Hydrogen-Induced Thermal Donors in Silicon?”
Simoen E, Huang YL, Ma Y, J. Lauwaert, P. Clauws, J.M. Rafí, A. Ulyashin and C. Claeys
J. Electrochem. Soc. 156 (6) p. H434-H442, 2009
2008
“Electrical passivation by hydrogen plasma treatment of transition metal impurities in germanium”
J. Lauwaert, J. Van Gheluwe and P. Clauws
Mat. Sci. Semicon. Proc. 11 (5-6) p. 360-363, 2008
“The growth of Co:ZnO/ZnO core/shell colloidal quantum dots : changes in nanocrystal size, concentration and dopant coordination”
P. Lommens, K. Lambert, F. Loncke, D. De Muynck, T. Balkan, F. Van Haecke , H. Vrielinck, F. Callens, Z. Hens
Chem. Phys. Chem. 9 (3) p. 484-491, 2008
"Gallium interstitial in irradiated germanium: Deep level transient spectroscopy
"V. Kolkovsky, M. C. Petersen, A. Mesli, J. Van Gheluwe, P. Clauws and A. Nylandsted Larsen
Phys. Rev. B 78 (23) art. no. 233201, 2008
“An accurate analytical approximation to the capacitance transient amplitude in deep level transient spectroscopy for fitting carrier capture data”
J. Lauwaert, J. Van Gheluwe, P. Clauws
Rev. Sci. Instrum. 79 (9) art. no. 093902, 2008
“Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium”
E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L.Van Meirhaeghe and P. Clauws
J. Appl. Phys. 104 (2) art. no. 023705, 2008
“Metal in-diffusion during Fe and co-germanidation of germanium”
E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe and P. Clauws
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XII, Book Series: SOLID STATE PHENOMENA 131-133, p. 47-52, 2008
2007
“Dopant incorporation in colloidal quantum dots : a case study on Co2+ doped ZnO”
. Lommens, P.F. Smet, F. Loncke, H. Vrielinck, D. Poelman, F. Callens, Z. Hens
Chem. Mater. 19 (23), 5576-5583, 2007
“Optical activity of Er3+ ions in Si/Si:Er nanolayers grown by sublimation MBE method”
N. Q. Vinh, S. Minissale, H. Vrielinck and T. Gregorkiewicz
Phys. Rev. B 76, article no. 085339 (5 pages), 2007
"Deep level transient spectroscopy of transition metal impurities in germanium
"P. Clauws, J. Van Gheluwe, J. Lauwaert, E. Simoen, J. Vanhellemont, M. Meuris and A. Theuwis
Phys. B 401, p. 188-191, 2007
“Electrical passivation by hydrogen of substitutional cobalt in monocrystalline germanium”
J. Lauwaert, J. Van Gheluwe, P. Clauws
Phys. B 401, p. 210-213, 2007
“Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si”
E. Gaubas, J. Vanhellemont, E. Simoen, I. Romandic, W. Geens and P. Clauws
Phys. B 401, p. 222-225, 2007
“On the impact of metal impurities on the carrier lifetime in n-type germanium”
Gaubas E, Vanhellemont J, Simoen E, A. Theuwis and P. Clauws
Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II Book Series: MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 994, p. 263-268, 2007
"Point-defect generation in Ni-, Pd-, and Pt-germanide Schottky barriers on n-type germanium "
E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe and P. Clauws
J. Electrochem. Soc. 154 (10), p. H857-H861, 2007
“Study of thin film CuInS2-on-Cu-tape (CISCuT) solar cells using deep level transient spectroscopy (DLTS)”
J. Van Gheluwe, P. Clauws
Thin Solid Films 515 (15), p. 6256-6259, 2007
“Atomic layer deposition of ZnO thin films on boron-doped nanocrystalline diamond”
A. Hikavyy, P. Clauws, K. Vanbesien, P. De Vischere, O. A. Williams, M. Daenen, K. Haenen, J. E. Butler and T. Feygelson
Diam. Relat. Mater. 16 (4-7), p. 983-986, 2007
“A DLTS study on plasma-hydrogenated n-type high-resistivity magnetic Cz silicon”
Y. L. Huang, E. Simoen, C. Claeys C, J. M. Rafí and P. Clauws
J. Mater. Sci.-Mater. El. 18 (7), p. 705-710, 2007
“Infrared absorption and slow positron investigation of hydrogen plasma induced platelets in crystalline germanium”
J. Lauwaert, J. De Baerdemaeker, C. Dauwe and P. Clauws
J. Mater. Sci.-Mater. El. 18 (7), p. 793-797, 2007
“Lifetime and leakage current considerations in metal-doped germanium”
E. Simoen, C. Claeys, S. Sioncke, J. Van Steenbergen, M. Meuris, S. Forment, J. Vanhellemont, P. Clauws and A. Theuwis
J. Mater. Sci.-Mater. El. 18 (7), p. 799-804, 2007
2006
“Microscopic theory of erbium ion de-excitation processes in silicon”
A. Prokofiev, I. N. Yassievich, H. Vrielinck, and T. Gregorkiewicz
Opt. Mater. 28 (6-7), 825-830, 2006
“Simulation of intrinsic point defect properties and vacancy clustering during Czochralski germanium crystal growth”
P. Spiewak, K. J. Kurzydlowski, J. Vanhellemont, P. Clauws, P. Wabinski, K. Mlynarczyk, I. Romandic and A. Theuwis
Mater. Sci. Semicon. Proc. 9 (4-5), p. 465-470, 2006
“Metals in germanium”
P. Clauws and E. Simoen
Mater. Sci. Semicon. Proc. 9 (4-5), p. 546-553, 2006
“A deep-level transient spectroscopy study of Co- and Ni-germanided n-type germanium”
K. Opsomer, E. Simoen, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, S. Forment and P. Clauws
Mater. Sci. Semicon. Proc. 9 (4-5), p. 554-558, 2006
“A deep-level transient spectroscopy study of transition metals in n-type germanium”
S. Forment, J. Vanhellemont, P. Clauws, J. Van Steenbergen, S. Sioncke, M. Meuris, E. Simoen and A. Theuwis
Mater. Sci. Semicon. Proc. 9 (4-5), p. 559-563, 2006
“Hydrogen-plasma-induced plate-like cavity clusters in single-crystalline germanium”
J. Lauwaert, M. L. David, M. F. Beaufort, E. Simoen, D. Depla and P. Clauws
Mater. Sci. Semicon. Proc. 9 (4-5), p. 571-575, 2006
“Deep level transient spectroscopy study of Pd and Pt sputtering damage in n-type germanium”
E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe and P. Clauws
Appl. Phys. Lett. 89 (20) art. no. 202114, 2006
“An investigation of structural and electrical properties of boron doped and undoped nanocrystalline diamond films”
A. Hikavyy, P. Clauws, J. Maes, V. V. Moshchalkov, J. E. Butler, T. Feygelson, O. A. Willams, M. Daenen and K. Haenen
Phys. Status Solidi A 203 (12) p. 3021-3027, 2006
“A criterion for the formation of stacking faults at incoherent spheroidal precipitates and application to silicon oxide in silicon”
J. Vanhellemont, O. De Gryse and P. Clauws
Phys. Status Solidi A 203 (10) p. 2341-2346, 2006
"Investigation of hydrogenated CVD diamond films by photo-thermal ionization spectroscopy"
A. Hikavyy, P. Clauws, W. Deferme, G. Bogdan, K. Haenen and M. Nesladek
Diam. Relat. Mater 15 (4-8) p. 682-686, 2006
“Hydrogen-plasma-induced thermal donors in high resistivity n-type magnetic Czochralski-grown silicon”
Y. L. Huang, E. Simoen, C. Claeys, J. M. Rafí, P. Clauws, R. Job and W. R. Fahrner
Appl. Phys. Lett. 89 (3) art. no. 031911, 2006
“Determination of oxide precipitate phase and morphology in silicon and germanium using infra-red absorption spectroscopy”
O. De Gryse, J. Vanhellemont and P. Clauws
Mater. Sci. Semicon. Proc. 9 (1-3) p. 246-251, 2006
“A photoluminescence and structural analysis of CuInS2-on-Cu-tape solar cells (CISCuT)”
J. Van Gheluwe, J. Versluys, D. Poelman, J. Verschraegen, M. Burgelman and P. Clauws
Thin Solid Films 511, p. 304-308, 2006
“Infrared analysis of the precipitated oxide phase in silicon and germanium”
O. De Gryse, P. Vanmeerbeek, J. Vanhellemont and P. Clauws
Phys. B 376 p. 113-116, 2006
“Simulation of point defect diffusion in germanium”
J. Lauwaert, S. Hens, P. Spiewak, D. Wauters, D. Poelman, I. Romandic, P. Clauws and J. Vanhellemont
Phys. B 376 p. 257-261, 2006
“Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n-type germanium”
E. Simoen, K. Opsomer, C. Claeys, K. Maex, C. Detavernier, R. L. Van Meirhaeghe, S. Forment and P. Clauws
Appl. Phys. Lett. 88 (18) art. no. 183506, 2006
