This document summarizes new features and bugfixes in each release of RSD2013.

Release version 3 - 2018-12-XX

	This is the release of the RSD2013 v3 software
	o  Major changes:
		- Operation control by pumping speed, discharge current or discharge voltage (besides the reactive gas flow).
		- Block and sinusiodal pulsing of operation parameters
		- Multiple varied operation parameters for time solution.
		- Option to limit the discharge on voltage or power (besides the current)
		- Optional input for IV-characteristic I=k*(V-V_0)^n for metal, poisoned and chemisorbed target
		- Movement of substrates in SiMTra can be included
		- Sputter yields can be defined as a linear function of the voltage
		- Correction of the ion current by the secondaray electron yield of the target
		- Knock-on of reactive atom of compound particle (standard: 0)
		- Sputter dilution by concentration of implanted reactive atoms (only time solution)
		- Sputter yield of non-bounded implanted reactive gas atoms at the surface
		- Sticking of out eroded non-bounded implanted reactive gas atoms (standard sticking: 0)
		- Two types of implantation profile Gaussian and uniform
		- Fast simulation option for uniform implantation profile by analytical expression
		- Rotatable target at specific rotation speed
		- Steady state checking for periodic behaviour
	o  Minor changes:
		- New GUI lay-out of the tabs Method, Chamber and Target
		- Output can be printed at a frequency given by a multiple of the integration step
		- Integrated manual in GUI
		- Synchronisation option with SiMTra
		- Steady state solution possible with some target cells with zero current

Beta version 2 - 2016-12-09

	This is the pre-release of the RSD2013 v2 software.
	o  Major changes:
		- Inclusion of a "Berg" model which excludes subsurface implantation and reaction
		- Molecular deposition of the compound is replaced by atomic deposition, still assuming congruently sputtering of the compound.
		- Integration of the software SiMTra V2.1.1:
			* SiMTra simulation can be run within the RSD software
			* Old style inclusion of SiMTra deposition files is maintained ("Manual input")
			* Automatic inclusion of SiMTra configuration is added ("SiMTra configuration")
			* Option to only use the SiMTra deposition profile with predefined deposition fraction
			* Option to only use the SiMTra deposition fraction with a uniform deposition profile
			* Corrected calculation of the area of the substrate cells
		- Definition of a seperate sputter yield for the chebmisorbed fraction

	o  Minor changes:
		- Improved steady state checker when using the time evolution method
		- Optional logarithmic distribution of the calculated steady state points between a minimum and a maximum
		- Output of substrate cell areas
		- Saturation limit L and spread S are redefined as the interval MR_((L-S)*z) to MR_((L+S)*z)
		- Non existing output folders are automatically created

Release version 1 - 2014-02-18

	This is the first public release of the RSD2013 software.
	o  Major features:
		- Time solution of the RSD2013 model by reactive flow control.
		- Steady state solution of the RSD2013 model in function of the reactive pressure.
		- Inclusion of multiple, spatial resolved substrate surfaces with a deposition distribution.
		- Inclusion of one, spatial resolved target with an ion current and redeposition distribution.
		- Geometric shape of target is circular (axisymmetric ion current profile assumed) or rectangular.
		- Accepts deposition profile generated by the SIMTRA software.


	